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? semiconductor components industries, llc, 2011 october, 2011 ? rev. 8 1 publication order number: NLAS5223B/d NLAS5223B, NLAS5223Bl ultra-low 0.35 dual spdt analog switch the NLAS5223B is an advanced cmos analog switch fabricated in sub ? micron silicon gate cmos technology. the device is a dual independent single pole double throw (spdt) switch featuring ultra ? low r on of 0.35 , at v cc = 4.3 v. the part also features guaranteed break before make (bbm) switching, assuring the switches never short the driver. features ? ultra ? low r on , 0.35 (typ) at v cc = 4.3 v ? NLAS5223B interfaces with 2.8 v chipset ? NLAS5223Bl interfaces with 1.8 v chipset ? single supply operation from 1.65 ? 4.5 v ? full 0 ? v cc signal handling capability ? high off ? channel isolation ? low standby current, 50 na ? low distortion ? r on flatness of 0.15 ? high continuous current capability ? ? 320 ma through each switch ? large current clamping diodes at analog inputs ? ? 320 ma continuous current capability ? package: ? 1.4 x 1.8 x 0.75 mm wqfn10 pb ? free ? 1.4 x 1.8 x 0.55 mm uqfn10 pb ? free ? these are pb ? free devices applications ? cell phone audio block ? speaker and earphone switching ? ring ? tone chip/amplifier switching ? modems http://onsemi.com marking diagram xxm xx = specific device code ad = NLAS5223Bmnr2g ae = NLAS5223Blmnr2g ap = NLAS5223Bmur2g m = date code/assembly location = pb ? free device wqfn10 case 488aq 1 (note: microdot may be in either location) 1 uqfn10 case 488at xxm v cc in2 com2 gnd 8 9 10 12 nc1 nc2 no1 76 5 4 3 no2 in1 com1 function table 0 1 in 1, 2 no 1, 2 nc 1, 2 off on on off see detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. ordering information
NLAS5223B, NLAS5223Bl http://onsemi.com 2 nc in no com figure 1. logic equivalent circuit pin description qfn pin # symbol name and function 2, 5, 7, 10 nc1 to nc2, no1 to no2 independent channels 4, 8 in1 and in2 controls 3, 9 com1 and com2 common channels 6 gnd ground (v) 1 v cc positive supply voltage maximum ratings symbol parameter value unit v cc positive dc supply voltage ? 0.5 to +5.5 v v is analog input voltage (v no , v nc , or v com ) ? 0.5 v is v cc + 0.5 v v in digital select input voltage ? 0.5 v in +5.5 v i anl1 continuous dc current from com to nc/no ? 320 ma i anl ? pk1 peak current from com to nc/no, 10% duty cycle, 100 ms = t on (note 1) ? 600 ma i anl ? pk2 instantaneous peak current from com to nc/no, 10% duty cycle, t on < 1 s ? 850 ma i clmp continuous dc current into com/no/nc with respect to v cc or gnd ? 100 ma stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. defined as 10% on, 90% off duty cycle. recommended operating conditions symbol parameter min max unit v cc dc supply voltage 1.65 4.5 v v in digital select input voltage (ovt) overvoltage tolerance gnd 4.5 v v is analog input voltage (nc, no, com) gnd v cc v t a operating temperature range ? 40 + 85 ? c t r , t f input rise or fall time, select v cc = 1.6 v ? 2.7 v v cc = 3.0 v ? 4.5 v 20 10 ns/v
NLAS5223B, NLAS5223Bl http://onsemi.com 3 NLAS5223B dc characteristics ? digital section (voltages referenced to gnd) symbol parameter condition v cc guaranteed limit unit 25 ? c ? 40 ? c to +85 ? c v ih minimum high ? level input voltage, select inputs 3.0 4.3 1.4 2.0 1.4 2.0 v v il maximum low ? level input voltage, select inputs 3.0 4.3 0.7 0.8 0.7 0.8 v i in maximum input leakage current, select inputs v in = v cc or gnd 4.3 ? 0.1 ? 1.0 a i off power off leakage current v in = v cc or gnd 0 ? 0.5 ? 2.0 a i cc maximum quiescent supply current (note 2) select and v is = v cc or gnd 1.65 to 4.5 ? 1.0 ? 2.0 a 2. guaranteed by design. resistance measurements do not include test circuit or package resistance. NLAS5223B dc electrical characteristics ? analog section symbol parameter condition v cc guaranteed maximum limit unit 25 ? c ? 40 ? c to + 85 ? c min max min max r on nc/no on ? resistance (note 3) v in = v il or v in = v ih v is = gnd to v cc i com = 100 ma 3.0 4.3 0.4 0.35 0.5 0.4 r flat nc/no on ? resistance flatness (notes 3 and 4) i com = 100 ma v is = 0 to v cc 3.0 4.3 0.16 0.11 0.20 0.14 r on on ? resistance match between channels (notes 3 and 5) v is = 1.5 v; i com = 100 ma v is = 2.2 v; i com = 100 ma 3.0 4.3 0.05 0.05 0.05 0.05 i nc(off) i no(off) nc or no off leakage current (note 3) v in = v il or v ih v no or v nc = 0.3 v v com = 4.0 v 4.3 ? 5.0 5.0 ? 50 50 na i com(on) com on leakage current (note 3) v in = v il or v ih v no 0.3 v or 4.0 v with v nc floating or v nc 0.3 v or 4.0 v with v no floating v com = 0.3 v or 4.0 v 4.3 ? 10 10 ? 100 100 na 3. guaranteed by design. resistance measurements do not include test circuit or package resistance. 4. flatness is defined as the difference between the maximum and minimum value of on ? resistance as measured over the specified analog signal ranges. 5. r on = r on(max) ? r on(min) between nc1 and nc2 or between no1 and no2.
NLAS5223B, NLAS5223Bl http://onsemi.com 4 NLAS5223Bl dc characteristics ? digital section (voltages referenced to gnd) symbol parameter condition v cc guaranteed limit unit 25 ? c ? 40 ? c to +85 ? c v ih minimum high ? level input voltage, select inputs 3.0 4.3 1.3 1.6 1.3 1.6 v v il maximum low ? level input voltage, select inputs 3.0 4.3 0.5 0.6 0.5 0.6 v i in maximum input leakage current, select inputs v in = 4.5 v or gnd 4.3 ? 0.1 ? 1.0 a i off power off leakage current v in = 4.5 v or gnd 0 ? 0.5 ? 2.0 a i cc maximum quiescent supply current (note 6) select and v is = v cc or gnd 1.65 to 4.5 ? 1.0 ? 2.0 a 6. guaranteed by design. resistance measurements do not include test circuit or package resistance. NLAS5223Bl dc electrical characteristics ? analog section symbol parameter condition v cc guaranteed maximum limit unit 25 ? c ? 40 ? c to + 85 ? c min max min max r on nc/no on ? resistance (note 7) v in = v il or v in = v ih v is = gnd to v cc i com = 100 ma 3.0 4.3 0.4 0.35 0.5 0.4 r flat nc/no on ? resistance flatness (notes 7 and 8) i com = 100 ma v is = 0 to v cc 3.0 4.3 0.16 0.11 0.20 0.14 r on on ? resistance match between channels (notes 7 and 9) v is = 1.5 v; i com = 100 ma v is = 2.2 v; i com = 100 ma 3.0 4.3 0.05 0.05 0.05 0.05 i nc(off) i no(off) nc or no off leakage current (note 7) v in = v il or v ih v no or v nc = 0.3 v v com = 4.0 v 4.3 ? 10 10 ? 100 100 na i com(on) com on leakage current (note 7) v in = v il or v ih v no 0.3 v or 4.0 v with v nc floating or v nc 0.3 v or 4.0 v with v no floating v com = 0.3 v or 4.0 v 4.3 ? 10 10 ? 100 100 na 7. guaranteed by design. resistance measurements do not include test circuit or package resistance. 8. flatness is defined as the difference between the maximum and minimum value of on ? resistance as measured over the specified analog signal ranges. 9. r on = r on(max) ? r on(min) between nc1 and nc2 or between no1 and no2.
NLAS5223B, NLAS5223Bl http://onsemi.com 5 ac electrical characteristics (input t r = t f = 3.0 ns) symbol parameter test conditions v cc (v) v is (v) guaranteed maximum limit unit 25 ? c ? 40 ? c to + 85 ? c min typ * max min max t on turn ? on time r l = 50 , c l = 35 pf (figures 3 and 4) 2.3 ? 4.5 1.5 50 60 ns t off turn ? off time r l = 50 , c l = 35 pf (figures 3 and 4) 2.3 ? 4.5 1.5 30 40 ns t bbm minimum break ? before ? make time v is = 3.0 r l = 50 , c l = 35 pf (figure 2) 3.0 1.5 2 15 ns typical @ 25, v cc = 3.6 v c in control pin input capacitance 3.5 pf c no/nc no, nc port capacitance 60 pf c com com port capacitance when switch is enabled 200 pf *typical characteristics are at 25 ? c. additional application characteristics (voltages referenced to gnd unless noted) symbol parameter condition v cc (v) 25 ? c unit typical bw maximum on ? channel ? 3 db bandwidth or minimum frequency response v in centered between v cc and gnd (figure 5) 1.65 ? 4.5 19 mhz v onl maximum feed ? through on loss v in = 0 dbm @ 100 khz to 50 mhz v in centered between v cc and gnd (figure 5) 1.65 ? 4.5 ? 0.06 db v iso off ? channel isolation f = 100 khz; v is = 1 v rms; c l = 5.0 pf v in centered between v cc and gnd (figure 5) 1.65 ? 4.5 ? 68 db q charge injection select input to common i/o v in = v cc to gnd, r is = 0 , c l = 1.0 nf q = c l x dv out (figure 6) 1.65 ? 4.5 38 pc thd total harmonic distortion thd + noise f is = 20 hz to 20 khz, r l = r gen = 600 , c l = 50 pf v is = 2.0 v rms 3.0 0.08 % vct channel ? to ? channel crosstalk f = 100 khz; v is = 1.0 v rms, c l = 5.0 pf, r l = 50 v in centered between v cc and gnd (figure 5) 1.65 ? 4.5 ? 70 db 10. off ? channel isolation = 20log10 (v com /v no ), v com = output, v no = input to off switch.
NLAS5223B, NLAS5223Bl http://onsemi.com 6 figure 2. t bbm (time break ? before ? make) output dut 50 35 pf v is switch select pin 90% output input v cc gnd 90% of v oh gnd figure 3. t on /t off 50% 50% 90% 90% t on t off v oh output input v cc 0 v figure 4. t on /t off dut open 35 pf v cc input 50% 50% 10% t on t off output input v cc 0 v 10% 50 0.1 f t bmm output v out v ol v out v oh v ol dut open v is input output 50 35 pf v out 0.1 f
NLAS5223B, NLAS5223Bl http://onsemi.com 7 channel switch control/s test socket is normalized. off isolation is measured across an off channel. on loss is the bandwidth of an on switch. v iso , bandwidth and v onl are independent of the input signal direction. v iso = off channel isolation = 20 log for v in at 100 khz v onl = on channel loss = 20 log for v in at 100 khz to 50 mhz bandwidth (bw) = the frequency 3 db below v onl v ct = use v iso setup and test to all other switch analog input/outputs terminated with 50 output dut input 50 50 generator reference transmitted figure 5. off channel isolation/on channel loss (bw)/crosstalk (on channel to off channel)/v onl 50 v out v in v out v in off on off v out v cc gnd output v in c l dut figure 6. charge injection: (q) v in open output
NLAS5223B, NLAS5223Bl http://onsemi.com 8 0 10 1000 10000 100000 frequency (hz) thd (%) figure 7. cross talk vs. frequency @ v cc = 4.3 v frequency (mhz) 0 ? 10 ? 70 xt (db) 0.1 100 10 1 0.01 ? 20 ? 30 ? 40 ? 50 ? 60 ? 80 figure 8. bandwidth vs. frequency frequency (mhz) bw (db) 0.01 100 1 0.1 0 ? 3 ? 6 ? 9 ? 12 ? 15 ? 18 10 0 0.05 0 0.5 1 1.5 2 3 v in (v) r on ( ) 2.5 ? 40 ? c 85 ? c 25 ? c 0.1 0.15 0.2 0.25 figure 9. total harmonic distortion figure 10. on ? resistance vs. input voltage @ v cc = 3.0 v figure 11. on ? resistance vs. input voltage @ v cc = 4.3 v 0 0.05 0.1 0.15 0123 r on ( ) v in (v) 0.5 1.5 2.5 3.5 4 ? 40 ? c 85 ? c 25 ? c 0.14 0.16 0.18 0.20 0.22 0.24 0 0.5 1 1.5 2 2.5 v in (v) r on ( ) figure 12. on ? resistance vs. input voltage 3.0 v 100 0.02 0.04 0.06 0.08 0.1 0.12 0.2 0.25 4.3 v ? 90 ? 100 0.3 0.35 0.35 3 0.4 0.3 3.5 4 0.4 4.5 0.26 0.28 0.30 0.32 0.34 0.36
NLAS5223B, NLAS5223Bl http://onsemi.com 9 ordering information device package shipping ? NLAS5223Bmnr2g wqfn10 (pb ? free) 3000 / tape & reel NLAS5223Blmnr2g wqfn10 (pb ? free) 3000 / tape & reel NLAS5223Bmur2g uqfn10 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NLAS5223B, NLAS5223Bl http://onsemi.com 10 package dimensions wqfn10, 1.4x1.8, 0.4p case 488aq ? 01 issue c mounting footprint 10 x pitch 1 9 x scale 20:1 0.663 0.0261 0.200 0.0079 0.400 0.0157 0.225 0.0089 2.100 0.0827 1.700 0.0669 0.563 0.0221 mm inches a b a3 a1 0.08 c seating plane note 3 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters 3. dimension b applies to plated terminal and is measured between 0.25 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. 5. exposed pads connected to die flag. used as test contacts. dim min max millimeters a 1.40 bsc a1 0.40 bsc a3 0.70 0.80 b d 0.30 0.50 e e l l1 0.20 ref 0.00 0.050 pin 1 reference d a e b 0.15 c 2x 0.15 c 2x 0.10 c c l1 10 1 3 5 6 0.05 c 0.10 ca b 10 x e e/2 l 9 x 0.40 0.60 1.80 bsc 0.15 0.25 m1 detail a bottom view (optional) m1 0.00 0.05
NLAS5223B, NLAS5223Bl http://onsemi.com 11 package dimensions uqfn10, 1.4x1.8, 0.4p case 488at ? 01 issue a a b a1 0.05 c seating plane note 3 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters 3. dimension b applies to plated terminal and is measured between 0.25 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. dim min max millimeters a 1.40 bsc a1 0.40 bsc 0.45 0.60 b d 0.30 0.50 e e l l1 0.00 0.05 pin 1 reference d a e b 0.10 c 2x 0.10 c 2x 0.05 c c l3 10 1 3 5 6 0.05 c 0.10 ca b 10 x e e/2 l 9 x 0.00 0.15 1.80 bsc 0.15 0.25 mounting footprint 10 x pitch 1 9 x scale 20:1 0.663 0.0261 0.200 0.0079 0.400 0.0157 0.225 0.0089 2.100 0.0827 1.700 0.0669 0.563 0.0221 mm inches 10x l1 detail a bottom view (optional) l3 0.40 0.60 0.127 ref a3 top view side view bottom view on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nlas5228b/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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